代理比亚迪BYD BF99N50L 9N50 500V 国产MOS管 质量优 价格好
代理比亚迪BYD BF99N50L 9N50 500V 国产MOS管 质量优 价格好
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比亚迪BYD BF99N50L 9N50 500V N沟道增强模式功率场效应晶体管采用DMOS技术。先进的DMOS技术已特别针对最大限度地减少通态电阻,具有优越的开关性能,并在雪崩和减刑模式能承受高能量脉冲。BF99N50L 9N50适用于高效率交换式电源供应设备,
BYD BF99N50L/ 9N50 BYD MOS特点:
▲VDS =500 V
▲ID=9A
▲RDS(ON)=0.75Ω(VGS= 10V,ID=4.5A)
▲低栅极电荷(35 nC)
▲低CRSS(10pF)
▲快速开关
▲封装:TO-220
BYD BF99N50L/ 9N50 BYD MOS参数说明(绝对最大额定值):
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current(continuous)at Tc=25℃ |
9 |
A |
|
IDM |
Drain Current (pulsed) (Note1) |
36 |
A |
|
VGS |
Gate-Source Voltage |
±30 |
V |
|
IAR |
Avalanche Current (Note1) |
9 |
A |
|
EAS |
Single Pulse Avalanche Energy (Note2) |
324 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) |
134 |
W |
|
TJ,Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
℃ |
|
TL |
Maximum Lead Temperature for Soldering Purpose |
300 |
℃ |
BYD BF99N50L/ 9N50 BYD MOS外形图:


