供应BSM50GB120DN2模块
供应BSM50GB120DN2模块
型号:BSM50GB120DN2
厂家:欧佩克(EUPEC)
封装:模块
规格:电流 50A
电压:1200V
单元:2
封装:34mm
应用:变频器，焊机，电源等
BSM50GB120DN2是西门子2单元、50A、1200V 的 DLC系列IGBT模块。主要是强电流、高压应用,用于变频器、UPS电源领域,西门子电力半导体器件广泛应用于发电、输配电、电气传动、牵引、电力系统，家用电器、新能源、汽车电子等电力电子设备中。
Infineon IGBT采用NPT-IGBT工艺，600V“HS”系列硬开关频率高达100KHz， 1200V“SKW”系列硬开关频率可达40KHz。温升低，有较大的血崩耐量。第三代IGBT，采用沟槽栅+电场终止层（Fieldstop）技术，具有较低的饱和压降，低达1.50V 。
Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage RGE = 20 kW |
VCGR |
1200 |
|
|
Gate-emitter voltage |
VGE |
± 20 |
|
|
DC collector current TC = TC = |
IC |
78 50 |
A |
|
Pulsed collector current, tp = 1 ms TC = TC = |
ICpuls |
156 100 |
|
|
Power dissipation per IGBT TC = |
Ptot |
400 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-40 ... + 125 |
|
Thermal resistance, chip case |
RthJC |
£ 0.3 |
K/W |
|
Diode thermal resistance, chip case |
RthJCD |
£ 0.6 |
|
|
Insulation test voltage, t = 1min. |
Vis |
2500 |
Vac |
|
Creepage distance |
- |
20 |
mm |
|
Clearance |
- |
11 |
|
|
DIN humidity category, DIN 40 040 |
- |
F |
sec |
|
IEC climatic category, DIN IEC 68-1 |
- |
40 / 125 / 56 |
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