Kollektor-Emitter-Sperrspannung collector-emitter voltage

TÝÎ = 25°C

V†Š»

1200

V

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

I† ÒÓÑ

800

A

Periodischer Kollektor Spitzenstrom repetitive peak collector current

t« = 1 ms, T† = 80°C

I†ç¢

1600

A

Gesamt-Verlustleistung total power dissipation

T† = 25°C, TÝÎ = 150°C

PÚÓÚ

3550

W

Gate-Emitter-Spitzenspannung gate-emitter peak voltage

V•Š»

+/-20

V

Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage

I† = 800 A, V•Š = 15 V                                   TÝÎ = 25°C

I† = 800 A, V•Š = 15 V                                   TÝÎ = 125°C

V†Š ÙÈÚ

1,70

2,00

2,15

V V

Gate-Schwellenspannung gate threshold voltage

I† = 32,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•ŠÚÌ

5,0

5,8

6,5

V

Gateladung gate charge

V•Š = -15 V ... +15 V

Q•

7,40

µC

Interner Gatewiderstand internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

0,94

Â

Eingangskapazität input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

CÍþÙ

56,0

nF

Rückwirkungskapazität reverse transfer capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

CØþÙ

2,30

nF

Kollektor-Emitter Reststrom collector-emitter cut-off current

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

I†Š»

5,0

mA

Gate-Emitter Reststrom

gate-emitter leakage current

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

I•Š»

400

nA

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 800 A, V†Š = 600 V                                 TÝÎ = 25°C

V•Š = ±15 V                                                    TÝÎ = 125°C

R•ÓÒ = 3,6 Â

tÁ ÓÒ

0,24

0,25

µs

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 800 A, V†Š = 600 V                                 TÝÎ = 25°C

V•Š = ±15 V                                                    TÝÎ = 125°C

R•ÓÒ = 3,6 Â

tØ

0,18

0,19

µs

µs

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 800 A, V†Š = 600 V                                 TÝÎ = 25°C

V•Š = ±15 V                                                    TÝÎ = 125°C

R•ÓËË = 0,91 Â

tÁ ÓËË

0,79

0,80

µs

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 800 A, V†Š = 600 V                                 TÝÎ = 25°C

V•Š = ±15 V                                                    TÝÎ = 125°C

R•ÓËË = 0,91 Â

tË

0,12

0,20

µs

µs

Einschaltverlustenergie pro Puls turn-on energy loss per pulse

I† = 800 A, V†Š = 600 V                                 TÝÎ = 25°C

V•Š = ±15 V, L» = 85 nH                                 TÝÎ = 125°C

R•ÓÒ = 3,6 Â

EÓÒ

85,0

mJ

mJ

Abschaltverlustenergie pro Puls turn-off energy loss per pulse

I† = 800 A, V†Š = 600 V                                 TÝÎ = 25°C

V•Š = ±15 V, L» = 85 nH                                 TÝÎ = 125°C

R•ÓËË = 0,91 Â

EÓËË

125

mJ

mJ

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎ = 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

IȠ

3200

A

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

0,035

K/W