产品信息
最新到货英飞凌BSM50GD120DN2 1200V IGBT功率模块
- 产品型号: BSM50GD120DN2
- 供应方式:
- 参考价格:面议
- 产品品牌: 英飞凌/INFINEON
- 产品Tag:IGBT BSM50GD120DN2
产品简介:
最新到货英飞凌 六单元BSM50GD120DN2 1200V IGBT功率模块 欢迎来电咨询价格!
型号:BSM50GD120DN2
品牌:英飞凌(INFINEON)/优派克
电压:1200V
BSM50GD120DN2特点:
▲VCES=1200V
▲电源模块
▲3相全桥
▲内置续流二极管
▲绝缘金属基板封装
▲3相全桥
▲内置续流二极管
▲绝缘金属基板封装
BSM50GD120DN2参数说明:
|
Type
|
VCE
|
IC
|
Package
|
Ordering Code
|
|
BSM50GD120DN2
|
1200V
|
72A
|
ECONOPACK 2K
|
C67076-A2514-A67
|
最大额定值:
|
Parameter
|
Symbol
|
Values
|
Unit
|
|
Collector-emitter voltage
|
VCE
|
1200
|
V
|
|
Collector-gate voltage
RGE = 20 kW
|
VCGR
|
1200
|
|
|
Gate-emitter voltage
|
VGE
|
± 20
|
|
|
DC collector current
TC = 25 °C
TC = 80 °C
|
IC
|
72
50
|
A
|
|
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
|
ICpuls
|
144
100
|
|
|
Power dissipation per IGBT
TC = 25 °C
|
Ptot
|
350
|
W
|
|
Chip temperature
|
Tj
|
+ 150
|
°C
|
|
Storage temperature
|
Tstg
|
-40 ... + 125
|
|
|
Thermal resistance, chip case
|
RthJC
|
£ 0.35
|
K/W
|
|
Diode thermal resistance, chip case
|
RthJCD
|
£ 0.7
|
|
|
Insulation test voltage, t = 1min.
|
Vis
|
2500
|
Vac
|
|
Creepage distance
|
-
|
16
|
mm
|
|
Clearance
|
-
|
11
|
|
|
DIN humidity category, DIN 40 040
|
-
|
F
|
sec
|
|
IEC climatic category, DIN IEC 68-1
|
-
|
40 / 125 / 56
|
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