产品信息
直销SKW20N60HS/ K20N60HS英飞凌高频600V IGBT单管
产品简介：
直销NPT技术SKW20N60HS/ K20N60HS英飞凌高频600V IGBT单管
SKW20N60HS/ K20N60HS 600V IGBT单管特点:
●NPT-IGBT 芯片技术
●比上一代降低30％的Eoff，
●短路承受时间- 10 us
●参数离散性小，易于批量生产
●参数离散性小，易于批量生产
●开关速度快，高频特性好
●正温度系数饱和压降，易于并联，具有类MOSFET特性
●可替代许多MOSFET应用领域
●拖尾电流小且随温度增加不明显增加，高温特性优异
●无锁定效应，过载能力强，可靠性高
●无铅电镀引脚;符合RoHS标准
●根据JEDEC1合格为目标
●根据JEDEC1合格为目标
SKW20N60HS/ K20N60HS 600V IGBT单管参数说明：
|
Type
|
VCE
|
IC
|
Eoff)
|
Tj
|
Package
|
Marking
|
|
SKW20N60HS
|
600V
|
20
|
240μJ
|
150℃
|
PG-TO-247-3
|
K20N60HS
|
最大额定值：
|
Parameter
|
Symbol
|
Values
|
Unit
|
|
Collector-emitter voltage
|
VCE
|
600
|
V
|
|
DC collector current
TC = 25 °C
TC = 100 °C
|
IC
|
36
20
|
A
|
|
Pulsed collector current, tp limited by Tjmax
|
ICpuls
|
80
|
|
|
Turn off safe operating area
VCE ≤600V, Tj ≤150°C
|
-
|
80
|
|
|
Diode forward current
TC= 25°C
TC= 100°C
|
IF
|
40
20
|
|
|
Diode pulsed current, tplimited by Tjmax
|
IFpuls
|
80
|
|
|
Gate-emitter voltage static
transient (tp<1μs, D<0.05)
|
VGE
|
± 20
± 30
|
V
|
|
Short circuit withstand time1)
VGE = 15V, VCC ≤600V, Tj ≤150°C
|
tsc
|
10
|
us
|
|
Power dissipation
TC= 25°C
|
Ptot
|
178
|
W
|
|
Operating junction and storage temperature
|
Tj
Tstg
|
-55~+150
|
°C
|
|
Time limited operating junction temperature for t< 150h
|
Tj(tl)
|
175
|
|
|
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
|
|
260
|
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
SKW20N60HS/ K20N60HS 600V IGBT单管 引脚说明：
销售热线：
电话:0755-26058625 26058626 手机:13006693670 E-mail:fulitong98@163.com
电话:0755-26058625 26058626 手机:13802293598 E-mail:yyd_2100@126.com
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