产品信息
英飞凌推出第三代IKW30N60H3/ K30H603 30A/600V IGBT单管
- 产品型号： IKW30N60H3
- 供应方式：
- 参考价格：面议
- 产品品牌： 英飞凌
- 产品Tag：英飞凌 IKW30N60H3
产品简介：
英飞凌推出第三代IKW30N60H3/ K30H603 30A/600V IGBT单管
IKW30N60H3/ K30H603是英飞凌(INFINEON)第三代30A/600V高开关速度IGBT单管,适用于焊接、UPS等IGBT高频应用领域。
IKW30N60H3/ K30H603特点：
•最高结温度为175℃
•最高结温度为175℃
•非常低VCEsat
•低开关损耗
•较高的开关坚韧性
•低开关损耗
•较高的开关坚韧性
•内置快速恢复反并联二极管
•根据JEDEC1合格为目标
•无铅引脚电镀符合RoHS标准
•根据JEDEC1合格为目标
•无铅引脚电镀符合RoHS标准
IKW30N60H3/ K30H603应用范围：
•UPS(不中断电源/不间断电源)
•焊接器
•UPS(不中断电源/不间断电源)
•焊接器
•高开关频率变换器
IKW30N60H3/ K30H603最大额定值:
|
Parameter
|
Symbol
|
Value
|
Unit
|
|
Collector-emitter voltage
|
VCE
|
600
|
V
|
|
DC collector current,limited by Tvjmax
TC = 25°C
TC = 100°C
|
IC
|
60.0
30.0
|
A
|
|
Pulsed collector current, tplimited by Tvjmax
|
ICpul s
|
120.0
|
|
|
Turn off safe operating area VCE≤600V, Tvj≤175°C
|
-
|
120.0
|
|
|
Diode forward current, limited by Tvjmax
TC = 25°C
TC= 100°C
|
IF
|
30.0
15.0
|
|
|
Diode pulsed current, tplimited by Tjmax
|
IFpul s
|
120.0
|
|
|
Gate-emitter voltage
|
VGE
|
±20
|
V
|
|
Short circuit withstand time
VGE = 15V, VCC≤400V
Allowed number of short circuits<1000
Time between short circuits:≥1.0s, Tvj≤150°C
|
tSC
|
5
|
us
|
|
Power dissipation TC= 25°C
Power dissipation TC= 100°C
|
Pt ot
|
187.0
94.0
|
W
|
|
Operating junction temperature
|
Tvj
|
-40..+175
|
°C
|
|
Storage temperature
|
Tstg
|
-55..+150
|
|
|
Soldering temperature,
Wave soldering 1.6mm (0.063 in.) from case for 10s
|
|
260
|
|
|
Mounting torque,M3 screw
Maximum of mounting processes:3
|
M
|
0.6
|
Nm
|
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