英飞凌IPW60R045CP原装品质保证价格优！
- 产品型号： IPW60R045CP
- 供应方式：
- 参考价格：面议
- 产品品牌： 英飞凌
- 产品Tag：英飞凌 IPW60R045CP
英飞凌IPW60R045CP原装品质保证价格优！
型号:IPW60R045CP
品牌:INFINEON
封装:TO247-3
欢迎来电洽淡!
Features
•Ultralowgatecharge
|
Parameter
|
Symbol
|
Conditions
|
Value
|
Unit
|
|
Continuousdraincurrent
|
ID
|
TC=25°C
|
60
|
A
|
|
TC=100°C
|
38
|
|||
|
Pulseddraincurrent2)
|
I D,pulse
|
TC=25°C
|
230
|
|
|
Avalancheenergy,singlepulse
|
E AS
|
ID=11A,VDD=50V
|
1950
|
mJ
|
|
Avalanche energy, repetitive t 2),3)
AR
|
E AR
|
ID=11A,VDD=50V
|
3
|
|
|
2),3)
Avalanche current, repetitive t AR
|
I AR
|
|
11
|
A
|
|
MOSFETdv/dt ruggedness
|
dv/dt
|
VDS=0...480V
|
50
|
V/ns
|
|
Gatesourcevoltage
|
V GS
|
static
|
±20
|
V
|
|
AC(f>1Hz)
|
±30
|
|||
|
Powerdissipation
|
P tot
|
TC=25°C
|
431
|
W
|
|
Operatingandstoragetemperature
|
T j, Tstg
|
|
-55...150
|
°C
|
|
Mountingtorque
|
|
M3andM3.5screws
|
60
|
Ncm
|
|
|
|
Parameter
|
Symbol
|
Conditions
|
Value
|
Unit
|
|
Continuousdiodeforwardcurrent
|
IS
|
TC=25°C
|
44
|
A
|
|
Diodepulsecurrent2)
|
I S,pulse
|
230
|
||
|
Reversediodedv/dt4)
|
dv/dt
|
|
15
|
V/ns
|
|
Parameter
|
Symbol
|
Conditions
|
Values
|
Unit
|
||
|
min.
|
typ.
|
max.
|
||||
sold
|
Drain-sourcebreakdownvoltage
|
V (BR)DSS
|
VGS=0V,ID=250µA
|
600
|
-
|
-
|
V
|
|
Gatethresholdvoltage
|
V GS(th)
|
VDS=VGS, ID=3mA
|
2.5
|
3
|
3.5
|
|
|
Zerogatevoltagedraincurrent
|
I DSS
|
VDS=600V,VGS=0V,
Tj=25°C
|
-
|
-
|
10
|
µA
|
|
VDS=600V,VGS=0V,
Tj=150°C
|
-
|
50
|
-
|
|||
|
Gate-sourceleakagecurrent
|
I GSS
|
VGS=20V,VDS=0V
|
-
|
-
|
100
|
nA
|
|
Drain-sourceon-stateresistance
|
R DS(on)
|
VGS=10V,ID=44A,
Tj=25°C
|
-
|
0.04
|
0.045
|
W
|
|
VGS=10V,ID=44A,
Tj=150°C
|
-
|
0.11
|
-
|
|||
|
Gateresistance
|
RG
|
f=1MHz,opendrain
|
-
|
1.3
|
-
|
W
|
|
|
|
Parameter
|
Symbol
|
Conditions
|
Values
|
Unit
|
||
|
min.
|
typ.
|
max.
|
||||
|
Inputcapacitance
|
C iss
|
VGS=0V,VDS=100V,
f=1MHz
|
-
|
6800
|
-
|
pF
|
|
Outputcapacitance
|
C oss
|
-
|
320
|
-
|
||
|
Effectiveoutputcapacitance,energy related5)
|
C o(er)
|
VGS=0V,VDS=0V
to480V
|
-
|
310
|
-
|
|
|
Effectiveoutputcapacitance,time related6)
|
C o(tr)
|
-
|
820
|
-
|
||
|
Turn-ondelaytime
|
t d(on)
|
VDD=400V,
VGS=10V,ID=44A,
RG=3.3W
|
-
|
30
|
-
|
ns
|
|
Risetime
|
tr
|
-
|
20
|
-
|
||
|
Turn-offdelaytime
|
t d(off)
|
-
|
100
|
-
|
||
|
Falltime
|
tf
|
-
|
10
|
-
|
|
Gatetosourcecharge
|
Q gs
|
VDD=400V,ID=44A,
VGS=0to10V
|
-
|
34
|
-
|
nC
|
|
Gatetodraincharge
|
Q gd
|
-
|
51
|
-
|
||
|
Gatechargetotal
|
Qg
|
-
|
150
|
190
|
||
|
Gateplateauvoltage
|
V plateau
|
-
|
5.0
|
-
|
V
|
|
Diodeforwardvoltage
|
V SD
|
VGS=0V,IF=44A,
Tj=25°C
|
-
|
0.9
|
1.2
|
V
|
|
Reverserecoverytime
|
t rr
|
VR=400V,IF=IS, diF/dt=100A/µs
|
-
|
600
|
-
|
ns
|
|
Reverserecoverycharge
|
Q rr
|
-
|
17
|
-
|
µC
|
|
|
Peakreverserecoverycurrent
|
I rrm
|
-
|
60
|
-
|
A
|
|
Type
|
Package
|
OrderingCode
|
Marking
|
|
IPW60R045CP
|
PG-TO247-3-1
|
SP000067149
|
6R045
|
IPW60R045CP特征：
IPW60R045CP采用 TO247封装，超低栅极电荷极限dv/dt的评价很高的峰值电流能力合格根据为目标的应用无铅镀;符合RoHS标准。
IPW60R045CP PDF文档下载
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