30N60A4D IGBT单管价格回落

产品信息

产品简介：

HGTG30N60A4D 30N60A4D 600V N沟道IGBT单管 价格回落 订购电话：13006693670

品牌：仙童（Fairchild）

型号：HGTG30N60A4D 30N60A4D

电压：600V

•600V开关SOA的能力
•典型下降时间:60ns at TJ = 125oC

•集电极—发射极最大电压VCEO: 600 V

•集电极—射极击穿电压: 600 V

•集电极—射极饱和电压: 1.8 V

•栅极/发射极最大电压: 20 V

•集电极最大连续电流Ic: 75 A

•栅极—射极漏泄电流: +/- 250 nA、

•温度补偿:SABER™ Model

•功率耗散: 463 W

•低传导损耗

•封装：TO-247

HGTG30N60A4D 30N60A4D IGBT单管参数说明：（绝对最大额定值）

Parameter	Symbol	HGTG30N60A4D （30N60A4D）	Units
Collector to Emitter Voltage	BVCES	600	V
Collector Current Continuous At TC = 25oC At TC = 110oC	IC25 IC110	75 60	A A
Collector Current Pulsed (Note 1)	ICM	240	A
Gate to Emitter Voltage Continuous	VGES	±20	V
Gate to Emitter Voltage Pulsed	VGEM	±30	V
Switching Safe Operating Area at TJ = 150oC (Figure 2)	SSOA	150A at 600V
Power Dissipation Total at TC = 25oC	PD	463	W
Power Dissipation Derating TC > 25oC		3.7	W/oC
Operating and Storage Junction Temperature Range	TJ, TSTG	-55 to 150	^oC
Maximum Temperature for Soldering	TL	260	^oC