ST品牌 TYN612M/ TYN612MRG/ TYN612MFP 12A/600V可控硅 价格优势
产品简介:
ST品牌TYN612M/ TYN612MRG/ TYN612MFP 12A/600V可控硅价格优势
参数说明:
|
Symbol
|
Value
|
Unit
|
|
IT(RMS)
|
12
|
A
|
|
VDRM/VRRM
|
600
|
V
|
|
IGT (min./max.)
|
1.5 / 5
|
mA
|
绝对额定值(极限值):
|
Symbol
|
Parameter
|
Value
|
Unit
|
||
|
IT(RMS)
|
RMS on-state current
(180° conduction angle)
|
TO-220AB
|
Tc = 105°C
|
12
|
A
|
|
TO-220FPAB
|
Tc = 70°C
|
12
|
|||
|
IT(AV)
|
Average on-state current
(180° conduction angle)
|
TO-220AB
|
Tc = 105°C
|
8
|
A
|
|
TO-220FPAB
|
Tc = 70°C
|
8
|
|||
|
ITSM
|
Non repetitive surge peak on-state current
|
tp = 8.3 ms
|
Tj = 25°C
|
125
|
A
|
|
tp = 10 ms
|
120
|
||||
|
I²t
|
I²t Value for fusing
|
tp = 10 ms
|
Tj = 25°C
|
72
|
A²S
|
|
dI/dt
|
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤100 ns
|
F = 60 Hz
|
Tj = 125°C
|
50
|
A/μs
|
|
IGM
|
Peak gate current
|
tp = 20 μs
|
Tj = 125°C
|
4
|
A
|
|
PG(AV)
|
Average gate power dissipation
|
Tj = 125°C
|
1
|
W
|
|
|
Tstg
Tj
|
Storage junction temperature range
Operating junction temperature range
|
- 40 to + 150
- 40 to + 125
|
°C
|
||
|
VRGM
|
Maximum peak reverse gate voltage
|
5
|
V
|
||
TYN612M/ TYN612MRG/ TYN612MFP封装说明:
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